HAH1DR 900-S

AUTOMOTIVE CURRENT TRANSDUCER HAH1DR 900-S Principle of HAH1DR Family Introduction The HAH1DR family is for the electronic measurement of DC, AC or pulsed currents in high power automotive applications with galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). The HAH1DR family gives you the choice of having different current measuring ranges in the same housing (from ± 200 A up to ± 900 A). The open loop transducers use an Hall effect integrated circuit. The magnetic flux density B, contributing to the rise of the Hall voltage, is generated by the primary current IP to be measured. The current to be measured IP is supplied by a current source i.e. battery or generator (Fig. 1). Within the linear region of the hysteresis cycle, B is proportional to: B (IP) = constant (a) x IP Features ●● Open Loop transducer using the Hall effect ●● Unipolar + 5 V DC power supply ●● Primary current measuring range up to ± 900 A ●● Maximum rms primary current limited by the busbar, the magnetic core or the ASIC temperature T° < + 150°C ●● Operating temperature range: - 40°C < T° < + 125°C ●● Output voltage: full ratiometric (in sensitivity and offset) ●● Compact design. The Hall voltage is thus expressed by: VH= (RH/d) x I x constant (a) x IP Except for IP, all terms of this equation are constant. Therefore: VH = constant (b) x IP The measurement signal VH amplified to supply the user output voltage or current. Advantages ●● Excellent accuracy +Vc ●● Very good linearity ●● Very low thermal offset drift ●● Very low thermal sensitivity drift IP Vout ●● Wide frequency bandwidth -Vc ●● No insertion losses. 0V Automotive applications ●● ●● ●● ●● ●● Battery monitoring Starter Generators Inverters HEV application EV application. Primary current I P Isolated output voltage Fig. 1: Principle of the open loop transducer Page 1/5 090707/4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HAH1DR 900-S Dimensions HAH1DR family (in mm. 1mm = 0.0394 inch) Front view Right view Bottom view Bill of materials System architecture (example) ●● Plastic case PBT GF 30 ●● Magnetic core Iron silicon alloy ●● Pins Weight Remarks ●● VOUT > Brass tin platted 48 g VC when IP flows in the direction of the arrow. 2 System architecture RL >10 kW optional resistor for signal line diagnostic VOUT Diagnosis Open circuit VIN = VC Short GND VIN = OV CL < 100 nF EMC protection RC Low pass filter EMC protection (optional) Page 2/5 090707/4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HAH1DR 900-S Absolute maximum ratings Parameter Specification Symbol Unit IPmax A VC V Output over voltage (continuous) VOUT V -0.5 VC + 0.5 Continuous output current IOUT mA -10 10 Output short-circuit duration Tc min Rms voltage for AC isolation test Vd kV Isolation resistance RIS MΩ Electrostatic discharge voltage VESD kV TS °C Symbol Unit IP A -900 Calibration current ICAL A -500 Supply voltage VC V 4.75 Min Typ Conditions Max Electrical Data Max primary current peak Supply continuous over voltage Reverse voltage 2) Ambient storage temperature 1) 7 Not operating 1 min @ TA = 25°C -0.5 2 2 500 50 Hz, 1 min 500 V - ISO 16750-2 2 -55 JESD22-A114-B 125 Operating characteristics Parameter Specification Min Typ Conditions Max Electrical Data Primary current 900 500 5.00 VOUT V VOUT = (VC/5) X (2.5 + G X IP) Sensitivity 3) G mV/A 2.22 Current consumption IC mA 15 Load resistance RL ΚΩ Output voltage (Analog) 3) Ω CL nF 1 Ambient operating temperature TA °C -40 Output drift versus power supply VOUT PS % Sensitivity error εG % Electrical offset current IOE Magnetic offset current IOM Global offset current IO Capacitive loading @ VC @ VC = 5 V 20 @ VC = 5 V, @ - 40°C < TA < 125°C 10 DC to 1 kHz 10 ROUT Output internal resistance @ TA = 25°C 5.25 100 125 Connector limited 105°C 1.0 @ TA = 25°C @ I = ICAL 0.5 Performance Data Average temperature coefficient of VOE Average temperature coefficient of G -1.0 ± 0.5 A -4.0 4.0 mV/°C -0.074 ± 0.03 0.074 @ - 40°C < T° < 125°C TCG AV %/°C -0.035 ± 0.02 0.035 @ - 40°C < T° < 125°C -0.5 0.5 @ ICAL -1.0 1.0 @ 800 A & measured sensitivity @ +/-Ical 2.0 @ 900 A & measured sensitivity @ +/-Ical % Response time to 90 % of IPN step tr µs 5 BW kHz 30 -2.0 Output clamping voltage max Output voltage noise peak-peak Notes: Vsz V Vno pp mV 090707/4 8 @ di/dt = 100 A/µs @ -3 dB 0.1 @ VC = 5 V, TA = 25°C @ VC = 5 V, TA = 25°C 4.9 10 DC to 1MHz Busbar temperature must be below 150°C Transducer not protected against reverse polarity. 3) The output voltage VOUT is fully ratiometric. The offset and sensitivity are dependent on the supply voltage VC relative to the following formula: 1) 2) VC  1 5  IP   VOUT    2  G VC  @ TA = 25°C TCVOE AV εL Output clamping voltage min @ TA = 25°C, @ VC = 5 V, after ± IP ± 1.2 Linearity error (% of full scale) Frequency bandwidth 4) @ TA = 25°C, @ VC = 5 V ± 2.5 4) with G in ( V / A ) Tested only with small signal only to avoid excessive heating of the magnetic core. LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. Page 3/5 www.lem.com HAH1DR 900-S Typical curves HAH1DR 900 Electrical offset Error (A) HAH1DR 900 Sensitivity Error (%) 3 5 4 2 3 2 1 1 0 0 -1 -1 -2 -3 -2 -4 -5 -40 -20 0 20 40 60 80 100 -3 -40 120 -20 0 20 Temperature (°C) HAH1DR 900 Frequency Bandwith 60 80 100 120 HAH1DR 900 Phase 0 0 100 -1 -10 -2 -20 1000 10000 100000 -30 Phase (°) -3 Gain (dB) 40 Temperature (°C) -4 -5 -40 -50 -60 -6 -70 -7 -80 -8 100 1000 10000 -90 100000 Frequency (Hz) Frequency (Hz) Typical response time at 100 A/µs Channel 1 (yellow) : Primary current Channel 2 (Red) : Output voltage signal Page 4/5 090707/4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HAH1DR 900-S PERFORMANCES PARAMETERS DEFINITIONS Sensitivity: Output noise voltage: The output voltage noise is the result of the noise floor of the The Transducer’s sensitivity G is the slope of the straight line Vout = f (IP), it must establish the relation: Hall elements and the linear IC amplifier gain. Vout (IP) = VC/5 (G x IP + 2.5) (*) Magnetic offset: (*) For all symetrics transducers. The magnetic offset is the consequence of an over-current on the primary side. It’s defined after an excursion of IP max. Offset with temperature: Linearity: The maximum positive or negative discrepancy with a reference straight line VOUT = f (IP). Unit: linearity (%) expressed with full scale of IP max. Linearity is measured on cycle + IP, O, - IP, O, + IP without magnetic offset (average values used). VOUT Non linearity example Reference straight line Max linearity error IP Linearity variation in IN % The error of the offset in the operating temperature is the variation of the offset in the temperature considered with the initial offset at 25°C. The offset variation IOT is a maximum variation the offset in the temperature range: IOT = IOE max - IOE min The Offset drift TCIOEAV is the IOT value divided by the temperature range. Sensitivity with temperature: The error of the sensitivity in the operating temperature is the relative variation of sensitivity with the temperature considered with the initial offset at 25°C. The sensitivity variation GT is the maximum variation (in ppm or %) of the sensitivity in the temperature range: GT = (Sensitivity max - Sensitivity min) / Sensitivity at 25°C. The sensitivity drift TCGAV is the GT value divided by the temperature range. Offset voltage @ IP = 0 A: Is the output voltage when the primary current is null. The ideal value of VO is VC/2 at VC = 5 V. So, the difference of VO -VC/2 Response time (delay time) tr: The time between the primary current signal and the output is called the total offset voltage error. This offset error can be attributed to the electrical offset (due to the resolution of the ASIC signal reach at 90 % of its final value. quiescent voltage trimming), the magnetic offset, the thermal drift and the thermal hysteresis. I [A] IT Environmental test specifications 90 % IS IP Name Standard Damp heat, steady state JESD22-A101 Isolation resistance tr ISO 16750-2 § 4.10 Conditions 85°C - 85°C / 1000h 500 V/1min Temperature humidity cycle test ISO 16750-4 -10 + 85°C 10 days Isolation test IEC 60664-1 2 kV/50 Hz/1min Mechanical tests Vibration test (random) t [µs] Typical: Theorical value or usual accuracy recorded during the production. IEC 60068-2-64 ISO 16750-3 & 4.1.2.5 (2007) 20 … 2000 Hz Random rms (11g rms) 8h/axis Terminal strength test According to LEM Thermal shocks IEC 60068-214 Na -40 + 125°C 300 cycles Free fall ISO 16750-3 § 4.3 1m concrete ground EMC Test Radiated electromagnetic immunity Directive 2004/104/CE ISO 11452-2 30 V/m 20-2000 MHz Bulk current injection immunity Directive 2004/104/CE ISO 11452-4 1-400 MHz - 60 mA Radiated radio frequency electromagnetic field immunity IEC 61000-4-3 80 MHz to 1,000 MHz - 10 V/m Electrostatic discharge immunity test IEC 61000-4-2 Air discharge=2 kV Page 5/5 090707/4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com